Considerations for ALD Processes Utilizing Hafnium, Titanium, and Silicon Amide Precursors John Peck, ... film was related to the extent of thermal decomposition.
When a hafnium oxide/silicon structure was subjected to ... The obtained low-temperature tetragonal hafnium oxide film had a high dielectric constant of 23 and a high ...
Thank you for your patience during this process. Advanced; Volume/Page ... Scitation: Erratum: Thermal oxidation of Hafnium Silicide Films on silicon.
In order to characterize interfacial composition at the oxynitride film/silicon ... it is believed that the hafnium oxide/silicon interface has similar chemical and
Hafnium (Hf) has an atomic ... It reacts in air and forms a film to protect the sample. ... carbon, iron, silicon, and sulfur. Hafnium readily forms compounds with ...
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in ...
Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium ...
Zirconium and/or hafnium silicon-oxynitride gate dielectric Abstract. A field effect semiconductor device comprising a high permittivity zirconium (or hafnium ...
Gettering and Defect Engineering in Semiconductor Technology XI: Pulsed Laser Deposition of Hafnium Oxide on Silicon
Publication » Hafnium silicide formation on Si ( 001 ). ... [Show abstract] [Hide abstract] ABSTRACT: The formation of hafnium silicate films (HfSixOy) for use as ...
Browse Vapor Deposition Materials in the Atlantic ... Hafnium Oxide; Hafnium Silicide; I ... Sputtering is an effective process whereby a thin film of a target ...
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are ...
As silicon electronics systems get smaller, ... The hafnium oxide thin film of has a consistent thickness of 45 nm and conforms to the profile of the surface.
The only drawback to the Sopra data is that, for most of the materials, ... Iron Silicide 2 Iron Silicide 3 Hafnium Silicide Iridium Silicide 1
High-k and Metal Gate Transistor Research . Intel made a significant breakthrough in the 45nm process by using a "high-k" (Hi-k) material called hafnium to replace ...
Texture in Nickel-Silicide Films on Silicon Meet. Abstr. 2006 MA2006-02 (20): 1012. Abstract; Full Text (PDF) « Previous | Next Article ...
The zirconium silicon-oxynitride may be formed as either a polycrystalline or an amorphous film. Generally, polycrystalline films will have a higher dielectric constant.
Abstract. Hafnium Silicide Films on silicon substrates were oxidized in dry oxygen or in oxygen bubbled through boiling water in the temperature range 400–1000 °C.
Hafnium Silicide (HfSi2) Sputtering Targets. Stanford Materials Corporation (SMC) offers innovative solutions for optimal sputtering results and an efficient coating ...
CAS 12401-56-8 Hafnium Silicide Sputtering Target HfSi2 bulk & lab quantity manufacturer. Annual production contracts & credit cards accepted. Research, Properties ...