Hafnium Silicide Film

  • Chemical Compatibility and Vapor Phase Stability ...

    Considerations for ALD Processes Utilizing Hafnium, Titanium, and Silicon Amide Precursors John Peck, ... film was related to the extent of thermal decomposition.

  • Tetragonal hafnium oxide film prepared by low-temperature ...

    When a hafnium oxide/silicon structure was subjected to ... The obtained low-temperature tetragonal hafnium oxide film had a high dielectric constant of 23 and a high ...

  • Erratum: Thermal oxidation of Hafnium Silicide Films on silicon

    Thank you for your patience during this process. Advanced; Volume/Page ... Scitation: Erratum: Thermal oxidation of Hafnium Silicide Films on silicon.

  • CHEMICAL VAPOR DEPOSITION OF HAFNIUM OXYNITRIDE FILMS USING ...

    In order to characterize interfacial composition at the oxynitride film/silicon ... it is believed that the hafnium oxide/silicon interface has similar chemical and

  • Hafnium Facts - Softschools.com

    Hafnium (Hf) has an atomic ... It reacts in air and forms a film to protect the sample. ... carbon, iron, silicon, and sulfur. Hafnium readily forms compounds with ...

  • Brevetto US20030155229 - Hafnium silicide target for gate ...

    The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in ...

  • Electrical characteristics of novel hafnium oxide film

    Hafnium oxide film grown by the direct sputtering of a hafnium target in oxygen ambient was investigated. XPS results showed that the interface between the hafnium ...

  • US Patent # 6,291,867. Zirconium and/or hafnium silicon ...

    Zirconium and/or hafnium silicon-oxynitride gate dielectric Abstract. A field effect semiconductor device comprising a high permittivity zirconium (or hafnium ...

  • Pulsed Laser Deposition of Hafnium Oxide on Silicon

    Gettering and Defect Engineering in Semiconductor Technology XI: Pulsed Laser Deposition of Hafnium Oxide on Silicon

  • Hafnium silicide formation on Si ( 001 ) - ResearchGate

    Publication » Hafnium silicide formation on Si ( 001 ). ... [Show abstract] [Hide abstract] ABSTRACT: The formation of hafnium silicate films (HfSixOy) for use as ...

  • Vapor Deposition Materials On Atlantic Equipment Engineers, Inc.

    Browse Vapor Deposition Materials in the Atlantic ... Hafnium Oxide; Hafnium Silicide; I ... Sputtering is an effective process whereby a thin film of a target ...

  • Patent US6020243 - Zirconium and/or hafnium silicon ...

    A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are ...

  • Atomic Layer Deposition of Thin Film Hafnium Oxide as Top ...

    As silicon electronics systems get smaller, ... The hafnium oxide thin film of has a consistent thickness of 45 nm and conforms to the profile of the surface.

  • Optical Data from Sopra SA - sspectra.com

    The only drawback to the Sopra data is that, for most of the materials, ... Iron Silicide 2 Iron Silicide 3 Hafnium Silicide Iridium Silicide 1

  • High-k and Metal Gate Transistor Research

    High-k and Metal Gate Transistor Research . Intel made a significant breakthrough in the 45nm process by using a "high-k" (Hi-k) material called hafnium to replace ...

  • Ab Initio Investigations of Textured Ni2Si Films on Silicon

    Texture in Nickel-Silicide Films on Silicon Meet. Abstr. 2006 MA2006-02 (20): 1012. Abstract; Full Text (PDF) « Previous | Next Article ...

  • Patent US6291867 - Zirconium and/or hafnium silicon ...

    The zirconium silicon-oxynitride may be formed as either a polycrystalline or an amorphous film. Generally, polycrystalline films will have a higher dielectric constant.

  • Thermal oxidation of Hafnium Silicide Films on silicon

    Abstract. Hafnium Silicide Films on silicon substrates were oxidized in dry oxygen or in oxygen bubbled through boiling water in the temperature range 400–1000 °C.

  • Hafnium Silicide (HfSi2) Sputtering Targets

    Hafnium Silicide (HfSi2) Sputtering Targets. Stanford Materials Corporation (SMC) offers innovative solutions for optimal sputtering results and an efficient coating ...

  • Hafnium Silicide Sputtering Target HfSi2 - American Elements

    CAS 12401-56-8 Hafnium Silicide Sputtering Target HfSi2 bulk & lab quantity manufacturer. Annual production contracts & credit cards accepted. Research, Properties ...